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| MP4411 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2--MOSV in One) MP4411 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver Industrial Applications Unit: mm * * * * * * * 4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25C) Low drain-source ON resistance: RDS (ON) = 0.28 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IGSS = 10 A (max) (VGS = 16 V) IDSS = 100 A (max) (VDS = 100 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25C) Drain power dissipation Ta = 25C (4-device operation) Tc = 25C DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating 100 100 20 3 12 2.2 4.4 28 140 3 0.22 mJ EART Tch Tstg 0.44 150 -55 to 150 C C Unit V V V A JEDEC JEITA TOSHIBA 2-32C1D Weight: 3.9 g (typ.) W PDT EAS IAR EAR W mJ A Single pulse avalanche energy (Note 1) Avalanche current 1 device operation Repetitive avalanche energy (Note 2) 4 devices operation Channel temperature Storage temperature range Note 1: Condition for avalanche energy (single pulse) measurement VDD = 50 V, starting Tch = 25C, L = 20 mH, RG = 25 , IAR = 3 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-01 MP4411 Array Configuration Thermal Characteristics 2 3 5 4 1 6 9 10 12 11 8 7 Characteristics Thermal resistance from channel to ambient (4-device operation, Ta = 25C) Thermal resistance from channel to case (4-device operation, Tc = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) TL 260 C Rth (ch-c) 4.46 C/W Symbol Max Unit Rth (ch-a) 28.4 C/W Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf VGS 0V 10 V ID = 2 A RL = 25 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2 A VGS = 10 V, ID = 2 A VDS = 10 V, ID = 2 A Min 100 0.8 1.5 VOUT 50 ns 40 Typ. 0.36 0.28 3.5 280 50 105 20 Max 10 100 2.0 0.45 0.35 Unit A A V V S pF pF pF Turn-on time Switching time Fall time 50 VDD 50 V VIN: tr, tf < 5 ns, duty 1%, tw = 10 s 170 Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd VDD 80 V, VGS = 10 V, ID = 3 A 13.5 8.5 5 nC nC nC 2 2004-07-01 MP4411 Source-Drain Diode Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 3 A, VGS = 0 V IDR = 3 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 100 0.2 Max 3 12 -1.5 Unit A A V ns C Flyback-Diode Rating and Characteristics (Ta = 25C) Characteristics Forward current Reverse current Reverse voltage Forward voltage Symbol IFM IR VR VF VR = 100 V IR = 100 A IF = 0.5 A Test Condition Min 100 Typ. Max 3 0.4 1.8 Unit A A V V Marking MP4411 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 3 2004-07-01 MP4411 ID - VDS 2.0 Common source Tc = 25C 1.6 8 6 4 3 10 8 10 8 6 ID - VDS Common source Tc = 25C (A) 2.8 1.2 2.6 0.8 2.4 0.4 VGS = 2.2 V (A) 10 ID ID 4 6 Drain current Drain current 4 3.5 3 2 VGS = 2.5 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 5 Common source 4 VDS = 10 V 3.2 VDS - VGS Common source (V) Tc = 25C 2.4 (A) ID Drain-source voltage 3 Drain current VDS 1.6 ID = 5 A 3 0.8 1.5 2 25 1 100 Ta = -55C ) 0 0 1 2 3 4 5 0 0 0.8 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 10 Common source 3 Common source Ta = -55C 100 25 1 RDS (ON) - ID Forward transfer admittance |Yfs| (S) 5 3 Drain-source on resistance RDS(ON) () VDS = 10 V Tc = 25C 1 0.5 0.3 VGS = 4 V 10 0.5 0.3 0.1 0.3 0.5 1 3 5 10 0.1 0.1 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 4 2004-07-01 MP4411 RDS (ON) - Tc RDS (ON) () 1.0 Common source 0.8 1.5 0.6 0.8 ID = 3 A 3 10 5 3 VGS = 10 V 3 1 0.5 0.3 IDR - VDS Drain-source on resistance 0.4 VGS = 4 V 0.8, 1.5 Drain reverse current IDR (A) 1 0 0.2 VGS = 10 V Common source Tc = 25C 0 -80 -40 0 40 80 120 160 0.1 0 -0.5 -1.0 -1.5 -2.0 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 3000 4 Common source 1000 VDS = 10 V ID = 1 mA Vth - Tc Vth (V) Gate threshold voltage 100 (pF) 500 300 Ciss 3 Capacitance C 2 100 50 Common source 30 VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 0.3 0.5 Coss Crss 1 1 3 5 10 30 50 Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) Dynamic Input/Output Characteristics 100 20 IDP max 10 Safe Operating Area (V) 80 VDS 16 VGS (V) VDS (A) 100 s* 3 ID max Drain-source voltage Gate-source voltage 60 12 Drain current ID 1 ms* 1 100 ms* *: Single nonrepetitive pulse Tc = 25C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 30 10 ms* 40 Common source VDD = 80 V ID = 3 A Tc = 25C 8 12 16 8 20 VGS 4 0 0 4 0 20 100 300 Total gate charge Q g (nC) Drain-source voltage VDS (V) 5 2004-07-01 MP4411 rth - tw (C/W) 300 Curves should be applied in thermal 100 limited area. (sSngle nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (2) (3) (4) rth Transient thermal resistance (1) 30 10 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 0.01 0.1 1 10 3 1 0.5 0.001 Circuit board 100 1000 Pulse width tw (s) PDT - Ta 8 (1) 1-device operation 200 (2) 2-device operation (3) 3-device operation 6 (4) 4-device operation Attached on a circuit board (4) 4 (3) (2) 2 (1) Circuit board EAS - TcH (W) EAS (mJ) Avalanche energy 160 PDT Total power dissipation 120 80 40 0 0 40 80 120 160 200 0 25 50 75 100 125 150 Ambient temperature Ta (C) Channel temperature Tch (C) Tch - PDT 160 Tch (C) (1) 120 (2) (3) (4) Channel temperature increase 15 V 80 Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 0 0 2 4 6 8 10 BVDSS IAR VDD VDS -15 V TEST CIRCUIT Peak IAR = 3 A, RG = 25 VDD = 50 V, L = 20 mH TEST WAVE FORM 1 2 B VDSS AS = *L*I * B - VDD 2 VDSS Total power dissipation PDT (W) 6 2004-07-01 MP4411 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-01 |
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